unisonic technologies co.,ltd 2sc3647 npn silicon transistor www.unisonic.com.tw 1 of 5 copyright ? 2009 unisonic technologies co., ltd qw-r208-039,c high-voltage switching applications ? features * high breakdown voltage and large current capacity * fast switching time * very small size marking it easy to provide high ? density, small-sized hybrid ics sot-89 1 lead-free: 2sc3647l halogen-free: 2sc3647g ? ordering information ordering number pin assignment lead free plating halogen free package 1 2 3 packing 2sc3647l-x-ab3-r 2SC3647G-X-AB3-R sot-89 b c e tape reel
2sc3647 npn silicon transistor unisonic technologies co., ltd 2 of 5 5 www.unisonic.com.tw qw-r208-039,c ? absoluate maxium ratings (ta = 25c) parameter symbol ratings unit collector to base voltage v cbo 120 v collector to emitter voltage v ceo 100 v emitter to base voltage v ebo 6 v collector current i c 2 a collector current (pulse) i cp 3 a collector dissipation p c 500 mw junction temperature t j 150 c storage temperature t stg -40 ~ +150 c note: absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? electrical characteristics (ta= 25c, unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage bv cbo i c = 10 a, i e =0 120 v collector-emitter breakdown voltage bv ceo i c = 1ma, r be = 100 v emitter-base breakdown voltage bv ebo i e = 10 a, i c =0 6 v collector cutoff current i cbo v cb = 100v, i e =0 100 na emitter cutoff current i ebo v eb = 4v, i c =0 100 na collector-emitter satu ration voltage v ce(sat) i c = 1a, i b = 100ma 0.13 0.4 v base-emitter satura tion voltage v be(sat) i c = 1a, i b = 100ma 0.85 1.2 v output capacitance c ob v cb = 10v, f =1mhz 16 pf dc current gain h fe v ce = 5v, i c = 100ma 100 400 turn-on time t on see specified test circuit. 80 ns storage time t stg see specified test circuit. 1000 ns fall time t f see specified test circuit. 50 ns gain-bandwidth product f t v ce = 10v, i c = 100ma 120 mhz classification of h fe rank r s t range 100 ~ 200 140 ~ 280 200 ~ 400
2sc3647 npn silicon transistor unisonic technologies co., ltd 3 of 5 5 www.unisonic.com.tw qw-r208-039,c ? switching time test circuit pw=20s dc 1% i b1 r b i b2 50 ? + 100f -5v input 10i b1 = -10i b2 =i c =0.7a 470f + 50v r l v r
2sc3647 npn silicon transistor unisonic technologies co., ltd 4 of 5 5 www.unisonic.com.tw qw-r208-039,c typical characterics 0 1.2 base to emitter voltage, v be (v) 0.4 0 0.4 1.0 2.4 1.6 0.8 0.2 0.8 1.2 i c -v be v ce = 5v 3 collector current, i c (a) 7 0.1 1.0 1000 100 h fe -i c 0.6 2.0 5 7 2 3 5 7 0.01 23 57 2 57 23 3 v ce = 5v collector to emitter saturation voltage, v ce (sat) (mv) output capacitance, c ob (pf)
2sc3647 npn silicon transistor unisonic technologies co., ltd 5 of 5 5 www.unisonic.com.tw qw-r208-039,c typical characterics(cont.) 0.01 collector to emitter voltage, v ce (v) 7 10 100 1.0 0.1 a s o 2 3 5 7 1.0 35 35 2 2 i cp 3 3 collector current, i c (a) 7 0.1 1.0 10 v be (sat) -i c 2 3 5 7 0.01 23 57 2 57 2 3 i c /i b = 10 t a = - 2 5 c 2 5 c 7 5 c 5 7 1.0 2 3 5 7 2 3 5 7 5 2 577 i c one pulse - ta = 25c mounted on ceramic board (250mm 0.8mm) d c o p e r a t i o n 1 0 0 m s 1 0 m s 1 m s 0 1.0 collector dissipation, pc (w) ambient temperature, ta (c) 0.2 0 60 140 1.8 1.2 0.6 20 100 160 p c -ta i n f i n i t e h e a t s i n k 80 1.6 0.8 0.4 120 40 1.4
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